ASTM F1404-1992(2007) 用熔融氢氧化钾腐蚀技术测试砷化镓结晶完整性的标准试验方法

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【英文标准名称】:TestMethodforCrystallographicPerfectionofGalliumArsenidebyMoltenPotassiumHydroxide(KOH)EtchTechnique
【原文标准名称】:用熔融氢氧化钾腐蚀技术测试砷化镓结晶完整性的标准试验方法
【标准号】:ASTMF1404-1992(2007)
【标准状态】:现行
【国别】:美国
【发布日期】:1992
【实施或试行日期】:
【发布单位】:美国材料与试验协会(US-ASTM)
【起草单位】:F01.15
【标准类型】:(TestMethod)
【标准水平】:()
【中文主题词】:
【英文主题词】:crystalperfection;etchpitdensity;galliumarsenide;potassiumhydroxideetch;semiconductor;singlecrystal;Contaminationsemiconductors;Crystallatticestructure;Defectssemiconductors;Densityelectronicapplications;Etching(materials/process);
【摘要】:TheuseofGaAsforsemiconductordevicesrequiresaconsistentatomiclatticestructure.However,latticeorcrystallinedefectsofvarioustypesandquantitiesarealwayspresent,andrarelyhomogeneouslydistributed.Itisimportanttodeterminethemeanvalueandthespatialdistributionoftheetchpitdensity.1.1Thistestmethodisusedtodeterminewhetheraningotorwaferofgalliumarsenideismonocrystallineand,ifso,tomeasuretheetchpitdensityandtojudgethenatureofcrystalimperfections.Totheextentpossible,itfollowsthecorrespondingtestmethodforsilicon,TestMethodF47.TestMethodF47alsopresentsthedefinitionofmanycrystallographicterms,applicabletothistestmethod.1.2Thisprocedureissuitableforgalliumarsenidecrystalswithetchpitdensitiesbetween0and200000/cm2.1.3Galliumarsenide,eitherdopedorundoped,andwithvariouselectricalproperties,maybeevaluatedbythistestmethod.Thefrontsurfacenormaldirectionofthesamplemustbeparalleltothex003C;001>withinx00B1;5x00B0;andmustbesuitablypreparedbypolishingoretching,orboth.Unremovedprocessingdamagemayleadtoetchpits,obscuringthequalityofthebulkcrystal.1.4Thisstandarddoesnotpurporttoaddressallofthesafetyproblems,ifany,associatedwithitsuse.Itistheresponsibilityoftheuserofthisstandardtoestablishappropriatesafetyandhealthpracticesandtodeterminetheapplicabilityofregulatorylimitationspriortouse.SpecifichazardstatementsaregiveninSection8.
【中国标准分类号】:H83
【国际标准分类号】:71_060_50
【页数】:6P.;A4
【正文语种】:英语